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RF331506 175CN 4VHCT1 2SK37107 2SK1549 NDL2409S PBPC306 FRS505Z
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  jiangsu changjiang electronics technology co., ltd to-92mod plastic-encapsulate transistors 2SC3243 transistor (npn) features power dissipation p cm : 0.9 w (tamb=25 ) collector current i cm : 1 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 2 ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb = 50 v, i e =0 0.2 a emitter cut-off current i ebo v eb = 4 v, i c =0 0.2 a dc current gain h fe(1) v ce =4v, i c = 100 ma 55 300 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 25 ma 0.3 v transition frequency f t v ce = 2 v, i c = 10 ma 80 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 25 pf classification of h fe(1) rank c d e range 55-110 90-180 150-300 marking to-92mod 1. emitter 2. collector 3. base 123


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